Abstract
In this study, solder-based die-attach processes used to affix GaAs devices to heat-spreading carriers were investigated. The solder microstructures were assessed, focusing on void formation, the response of the solder, the backsurface metallization, and the carrier plating to die attachment and reflow thermal processes. Voided regions were found in all solder joints, with a dramatic sensitivity to temperature cycles. Gold-tin alloy phases were found to dominate the solder microstructure for all of the configurations. The total thermal budget was a critical issue in the formation and transformation of various phases as expected for low-melting-point alloys. The NiV-Au backmetal system was investigated to determine the suitability for die attachment.
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