Abstract
In this work 3 × 3 crossbar arrays of titanium oxide were fabricated and tested for non-volatile memory applications and neuromorphic pattern recognition. The non-volatile memory characteristics of the memristor were examined using retention tests for each memristor. In order to test neuromorphic pattern recognition, the memristor crossbar array was programmed to store ‘111’, ‘100’ and ‘010’ at the first, second and third columns of the array, where ‘0’ and ‘1’ represent the high-resistance state (HRS) and low-resistance state (LRS), respectively. The three similar input patterns of ‘111’, ‘100’ and ‘010’ were applied to the crossbar array, for pattern recognition. Using a twin memristor crossbar array mechanism all three input patterns were recognized.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.