Abstract
We describe a numerical model of the coupled gas‐phase hydrodynamics and chemical kinetics in a silicon chemical vapor deposition (CVD) reactor. The model, which includes a 20‐step elementary reaction mechanism for the thermal decomposition of silane, predicts gas‐phase temperature, velocity, and chemical species concentration profiles. It also predicts silicon deposition rates at the heated reactor wall as a function of susceptor temperature, carrier gas, pressure, and flow velocity. We find excellent agreement with experimental deposition rates, with no adjustment of parameters. The model indicates that gas‐phase chemical kinetic processes are important in describing silicon CVD.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
