Abstract
Abstract The problem of high-intensity laser pulse interaction with a semiconductor under the condition of the light energy nonlinear absorption is considered. Mathematical model of an optical bistability based on re-normalization of forbidden energy zone of a semiconductor because of the induced electric field is presented. The multiplicity of the problem solutions at the Neumann boundary conditions statement is discussed and ways of its overcoming are proposed. The effective method for the numerical solution of the problem is developed and computer simulation results are presented.
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