Abstract
Using out-of-plane magnetized layers, a lateral shift register made from discrete elements is demonstrated. By carefully designing the in-plane shape of the elements which make up the shift register, both the position of nucleation of new domains and the coercivity of the element can be controlled. The dipole field from a neighboring element, placed tens of nanometers away, creates a bias field on the nucleation site, which can be used to create a NOT gate. By chaining these NOT gates together, a shift register can be created where data bits consisting of neighboring layers with aligned magnetization are propagated synchronously under a symmetric applied magnetic field. The operation of a 16 element shift register is shown, including field coupled data injection.
Highlights
The highly nonlinear switching and non-volatility of magnetic materials makes them ideal candidates for implementing logic operations [1]
Perpendicularly magnetized materials have the advantages of narrow, fast-moving domain walls [2] and high bit stability at small lateral sizes [3] due to the relatively large anisotropies that can be achieved in such systems
One commonly used sequential logic device is the shift register, whose state is a function of both current inputs and its history, which is used in data storage, timing and converting between serial and parallel interfaces
Summary
The highly nonlinear switching and non-volatility of magnetic materials makes them ideal candidates for implementing logic operations [1]. Perpendicularly magnetized materials have the advantages of narrow, fast-moving domain walls [2] and high bit stability at small lateral sizes [3] due to the relatively large anisotropies that can be achieved in such systems. Using these materials, data bit storage and various types of logic devices have been demonstrated [4,5,6,7,8,9].
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