Abstract
Both static and dynamic effects related to self-heating in MOSFETs (Metal Oxyde-Silicon Field Effect Transistor) are studied in order to construct an adequate compact thermal model. An available 2D electrical device simulator in addition to a simple 2D finite difference code for the heat equation are used as analysis tools, These tools are used both to justify the proposed model topology as well as to extract model parameters. Both static and dynamic effects predicted by the model are compared with existing experimental results.
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