Abstract
We propose an improved lumped-parameter equivalent circuit model to describe S-shaped I–V kinks observed from organic solar cells. Firstly, to predict the S-shaped I–V kinks accurately in both the first and fourth quadrants, a shunt resistor in parallel with extraction diode is added to our previous model. Secondly, based on the Newton–Raphson method, we derive a solution to our improved circuit. Thirdly, our solution is verified by the method of least squares and experiments. Finally, compared with our previous work, the improved circuit has higher accuracy in demonstrating S-shaped I–V kinks in the first and fourth quadrants. Such an improved model is suitable for circuit simulations of organic solar cells.
Highlights
Photoelectric conversion devices, especially for solar cells, have attracted the extensive attention of researchers, because solar energy as an alternative energy source can facilitate us to solve the serious environmental and reserving limitation problems of fossil fuels
S-shaped I–V kinks in the first and fourth quadrants. Such an improved model is suitable for circuit simulations of organic solar cells
Modeling for solar cells aims at accurately predicting the electrostatic properties of the real solar cell devices examined under illuminated and dark environments
Summary
Photoelectric conversion devices, especially for solar cells, have attracted the extensive attention of researchers, because solar energy as an alternative energy source can facilitate us to solve the serious environmental and reserving limitation problems of fossil fuels. Modeling for solar cells aims at accurately predicting the electrostatic properties of the real solar cell devices examined under illuminated and dark environments Among these properties, current–voltage (I–V) curve, power–voltage (P–V) curve, fill-factor (FF), and power-conversion efficiency (PCE) are four key characteristics. As one of the most important characteristics, the I–V curve is commonly simulated by the conventional lumped-parameter equivalent circuit models including only one diode or multiple diodes [5,6]. These conventional models from [5,6] fail in explaining the S-shaped kinks [7,8] emerging near the open-circuit voltage (Voc ) point of OSCs. S-shaped kinks are one of the major issues affecting OSCs’. For the improved lumped-parameter circuit, the accuracy of I–V solution is verified by the least square method, and the practicability is validated by the reconstructed results of experiments [20]
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