Abstract
Low-temperature photoluminescence (4.2 and 35 K) has been used to study the defects created by high-energy particle irradiation (gamma rays, electrons, ions) of silicon on sapphire (SOS) films. It was found that the noble gas atoms implanted into silicon layers take an active part in the processes of interaction with radiation damage. Data on the temperature stability of luminescence centres are given. The residual compressive stress in SOS films is estimated using the photoluminescence method.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
