Abstract
A superjunction metal-oxide-semiconductor field-effect transistor (SJ-MOSFET) with P-base and N-pillar Schottky contacts is proposed and investigated in this article. The dual Schottky contacts form a p-type Schottky diode and an n-type Schottky diode on the surface of the device, respectively. During the reverse conduction stage, the operation of the body p-n junction diode is suppressed by the reverse-biased p-type Schottky diode, and the reverse current is fully conducted by the n-type Schottky diode. Therefore, the minority carrier injection is completely suppressed, leading to an ultralow reverse recovery charge. TCAD simulation results show that, in comparison with the conventional SJ-MOSFET, up to 95.7% reduction in reverse recovery charge could be achieved.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
