Abstract
A low power and low voltage temperature sensor with power supply voltage insensitive improvement is presented in this paper. Compared to the conventional four-transistor temperature sensor, which has the power supply voltage sensitive problem, the linearity error of the proposed structure is reduced. The proposed temperature sensor is designed in TSMC 90nm 1P9M process and the nominal power supply voltage is 1V. The simulation results show that the linearity error of the proposed circuit is 0.29 °C and power consumption is 29μw. The linearity errors are 0.99°C and 2.8 °C under the 10% variation of the power supply voltage.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
