Abstract
A low-power 1Kb phase change random access memory (PCRAM) chip is designed. The chip uses 1T1R (one transistor one resistor) structure and titanium nitride (TiN) bottom electrode (BE) for reducing power consumption. Besides, the write property of the chip is improved by employing a ramp down pulse generator. The chip is fabricated in 130nm CMOS standard technology. The test result shows a 56% power reduction based on TiN BE compared with tungsten (W) BE, which predicts a new direction to realize the commercialization of PCRAM.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
