A Low-Noise Front-End Amplifier with 15 dB Gain Operating at 100–120 GHz in 65 nm CMOS Technique

Abstract

This paper illustrates a (100-120) GHz Low Noise Amplifier (LNA) designed for wideband imaging in millimeter (mm) - wave applications. The design has been made in 65 nm CMOS technology. The proposed amplifier model uses Common Source (CS) configuration in cascaded with cascode topology. The optimum transistor geometries are used to obtain large power gain. $(S_{21})$ and minimum Noise Figure $(NF_{min})$ . The inductive peaking technique is utilized to achieve flat gain and bandwidth extension. The designed amplifier provides a 15 dB gain at 100 GHz and 20 GHz 3 dB bandwidth with input and output matching less than −10 dB and −7 dB respectively. The NF of 4.6 dB at 100 GHz and less than 6 dB are inferred across the total band. The amplifier attains a 1 dB compression point (P1dB) at −12 dBm. The designed LNA achieves −5 dBm IIP3 with 10 mW of power consumption from a supply of 1.2 V.