Abstract
This paper describes the design, fabrication, and testing of a low-voltage tunneling-based silicon microaccelerometer. The device has been successfully batch-fabricated by the boron etch-stop dissolved wafer process. A 4 h, 1100/spl deg/C oxygen, post-diffusion annealing process has been developed to eliminate the stress gradient in and warpage of thin (/spl ap/3 /spl mu/m) heavily-boron-doped silicon microstructures. Using a simple discrete readout circuit, the device with an active area of 400/spl times/400 /spl mu/m/sup 2/ provides a measured sensitivity of 1.66/spl times/10/sup 4/ ppm/g (133 mV/g), bandwidth of 2 kHz in air, and a full scale range of 30 g with a nonlinearity of 0.6%. The measured noise spectrum exhibits a typical 1/f behavior and drops from 1.75 mg//spl radic/Hz (at 50 Hz) to 0.25 mg//spl radic/Hz (at 2 kHz), corresponding to a minimum detectable acceleration of 22.8 mg. The variations of the offset output voltage and device sensitivity are /spl plusmn/40 mV (/spl ap/0.5%) and /spl plusmn/0.65 mV/g (/spl ap/0.49%) in continuous operation over thirty days. The temperature coefficient of offset (TCO) and temperature coefficient of sensitivity (TCS) are -600 ppm//spl deg/C and 1200 ppm//spl deg/C, respectively.
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