Abstract
This paper presents a sense amplifier scheme for low-voltage embedded flash (eFlash) memory applications. The topology of the sense amplifier is based on current mode comparison. Moreover, an offset-voltage elimination technique is employed to improve the sensing performance under a small memory cell current. The proposed sense amplifier is designed based on a GSMC 130 nm eFlash process, and the sense time is 0.43 ns at 1.5 V, corresponding to a 46% improvement over the conventional technologies.
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