Abstract
Long-gap spark discharge is beneficial for plasma-assisted combustion. However, the longer the discharge gap, the higher the breakdown voltage required, which is not feasible in practical applications. In the present study, based on a custom-built semiconductor, a long gap discharge plasma actuator is designed, and the breakdown voltage is relatively low compared with the normal spark discharge method. The breakdown discharge voltage for 25mm gap at atmospheric pressure is only 3.24kV. The discharge characteristics were investigated in detail. The influence of voltage, capacitance, and the semiconductor geometric parameters on the discharge characteristics is investigated. Based on a high-speed camera, the temporal and spatial long gap discharge process was captured firstly. Combined the discharge waveforms and images, the discharge process of the semiconductor arc discharge plasma actuator is divided into four stages: applying high voltage, surface discharge, air breakdown, and conduction discharge. Using digital image processing techniques, the influence of voltage, capacitance and air gap on surface discharge evolution velocity was studied.
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