Abstract
The liquid phase epitaxy regrowth process of the GaInAsP/InP flat-surface circular buried heterostructure (FCBH) has been improved and a perfectly buried microsize active region of 8 µm in diameter and 1.2 µm in depth was realized with good reproduclbility. Low-threshold (Ith=52 mA) lasing operation of a 1.3-µm-range FCBH surface emitting laser with a pair of dielectric micromirrors was achieved in a pulsed condition at 0°C.
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