Abstract
Preferentially (105)-oriented Sr0.7B12.8Ta2O9 thin films on SiO2/n-Si(100) have been prepared by Pulsed Laser Deposition (PLD) at low temperature as low as 350°C, which is the lowest process temperature for growing Sr x BiyTa2O9(SBTO) ferroelectric thin films. Insulating properties of the SBTO film have been improved by lowering the process temperature or by increasing Sr/Bi atomic ratio from 0.7/2.8 to 0.7/2.0. After applying the low leakage SBTO films to Metal-Ferroelectric-Insulator-Semiconductor diode structures, it is finally observed that their C-V curves have counterclockwise dielectric hysteresis that indicates the films' ferroelectric hysteresis sufficiently control the Si surface potential. A low temperature process in preparing ferroelectric thin film and Sr-deficient and Bi-excess SBTO thin film by PLD method are very effective and promising for realizing an excellent MFIS FET structure.
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