Abstract
WSe2 films have been fabricated using a low-temperature, two-step method involving the reaction of W(CO)6 and elemental selenium in refluxing (110 °C) toluene to form a nanocrystalline precursor consisting of amorphous tungsten and trigonal crystalline selenium. Drop cast or airbrush-deposited films of this precursor were annealed in an argon atmosphere using a two-step temperature ramp (250 °C for 15 min followed by 550 °C for 30 min). Raman and x-ray diffraction (XRD) characterization as well as the measured bandgaps of the resulting films are consistent with (002)-oriented WSe2 and are compared to the characterization of films produced via selenization of sputtered tungsten films in closed quartz tubes at 875 °C.
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