A low-temperature crystallization path for device-quality ferroelectric films

Abstract

We show a path for low-temperature crystallization of device-quality solution-processed lead zirconate titanate films. The essential aspect of the path is to circumvent pyrochlore formation at around 300 °C during temperature increase up to 400 °C. By maintaining enough carbon via pyrolysis at 210 °C, well below the temperature for pyrochlore formation, Pb2+ can be reduced to Pb0. This leads to the lack of Pb2+ in the film to suppress the development of pyrochlore, which accounts for the usual high-temperature conversion to perovskite. Films on metal, metal/oxide hybrid, and oxide bottom electrodes were successfully crystallized at 400–450 °C.