A Low Recovery Loss Reverse-Conducting IGBT with Metal/P-body Schottky Junctions for Hard-Switching Applications

Abstract

In this paper, a new 1200 V-class reverse-conducting insulated gate bipolar transistor (RC-IGBT) for hard-switching applications is proposed. The proposed structure features deep metal plugs at the emitter-side, and Schottky junctions are formed between the metal plugs and the p-body regions. This design reduces the anode injection efficiency of the built-in diode. Simulation results show that the proposed structure can achieve a significant reduction in the diode-mode reverse-recovery loss, Err, (−70% at R.T. and −57% at 150°C) without degrading the IGBT-mode performance compared with conventional RC-IGBT. Furthermore, it is also found that the proposed structure can achieve comparable diode-mode performance in terms of Err and Vf (diode-mode forward voltage) compared with those of the state-of-the-art discrete free-wheeling diodes for hard-switching applications.