A low quiescent current and cross regulation single-inductor dual-output converter with stacking MOSFET driving technique

Abstract

The stacking MOSFET structure composed of low-voltage devices suffers from deteriorated transient response or large footprint area when capacitor-free or dominant pole compensation low dropout (LDO) regulator biases the driver. Due to self-stabilized feature, the proposed stacking MOSFET driving (SMD) technique effectively drives the power stage and greatly reduces noise interference from the noisy node to achieve low cross regulation (CR) in the single-inductor dual-output (SIDO) converter. Moreover, two inherent low dropout (LDO) regulators in the SMD technique completely regulate two outputs with low quiescent current at no load condition. Experimental results show the tested chip fabricated in 0.25μm process with low cross regulation of 0.015mV/mA and ultra-low quiescent current of 5μA at no load condition.