Abstract
An integrated 1.5GHz low power Low Noise Amplifier (LNA) for portable global positioning system (GPS) receivers is proposed based on SMIC 180nm 1P6M RF CMOS process. The MOS transistors in the proposed LNA are biased in moderately inverted region to achieve low power. The post-layout simulation results show that, at worst case, a voltage gain of 19dB is achieved with noise figure (NF) of 4.2dB, an input third order intermodulation point (IIP3) of −14dBm and an input return loss of −8dB. The power consumption of the circuit is only 1mW at supply voltage of 0.7V. The ratio of gain to dc power consumption is 19dB/mW.
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