Abstract
A low power dissipation and broadband transimpedance amplifier IC has been developed for sub-carrier multiplexing (SCM) optical communication systems such as a multi-channel video signal transmission system. A 0.25 μm pseudomorphic double-heterojunction modulation-doped FET (MODFET) is adopted for the IC to achieve the required bandwidth and noise performance. Specifically, transimpedance gain of 52 dBΩ with equivalent input noise current of 12 pA/√Hz has been obtained between 0.4–7 GHz. In order to minimize the group delay (GD) deviation, a peaking control technique is investigated. We also adopted the flip-chip bonding method to reduce the parasitic elements. As a result, group delay deviation of less than 30 ps has been obtained. A novel SrTiO 3 (STO) capacitor process technology is incorporated to realize low power dissipation. By using integrated STO capacitors for DC blocking, single power-supply voltage of 5 V and power dissipation of 300 mW are realized. This power dissipation is less than one half of that required by conventional transimpedance amplifiers.
Published Version
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