A low phase noise LC-VCO with a high-Q inductor fabricated by wafer level package technology

Kazuma Ohashi Kazuma Ohashi,Ryozo Yamauchi Ryozo Yamauchi,Kenichi Okada Kenichi Okada,Takuya Aizawa Takuya Aizawa,Hideki Hatakeyama Hideki Hatakeyama,Yuka Kobayashi Yuka Kobayashi,Kazuya Masu Kazuya Masu,Tatsuya Ito Tatsuya Ito,Hiroyuki Ito Hiroyuki Ito

doi:10.1109/rfic.2008.4561400

A low phase noise LC-VCO with a high-Q inductor fabricated by wafer level package technology

Kazuma Ohashi Kazuma Ohashi, Ryozo Yamauchi Ryozo Yamauchi + Show 7 more

https://doi.org/10.1109/rfic.2008.4561400

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Publication Date: Jun 1, 2008

Citations: 15

Affiliation: Fujikura (Japan), Tokyo Institute of Technology

#Voltage Controlled Oscillator #Wafer-level-package + Show 8 more

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Abstract

This paper presents a CMOS voltage controlled oscillator (VCO) with a high-Q inductor fabricated by using a commercial wafer-level-package (WLP) technology. A new topology suitable for CMOS VCOs with high-Q WLP inductors is proposed. Measured Q of a WLP inductor is 40 in differential mode at around 1.9 GHz. A phase noise is -134.4 dBc/Hz at a 1 MHz offset for 1.9 GHz carrier frequency, and a FoM is -193 dBc/Hz. The VCO with the WLP inductor improves a phase noise of 6.4 dB as compared to VCOs with conventional on-chip inductors.

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