A Low Phase-noise 0.9/1.8 ㎓ Dual-band LC VCO using 0.18 ㎛ CMOS Technology

Abstract

This paper presents a low phase–noise 0.9/1.8 ㎓ dual-band LC voltage controlled oscillator (VCO) using 0.18 ㎛ complementary metal-oxide semiconductor (CMOS) technology. The proposed CMOS-based LC VCO is composed of varactor diodes and a switched capacitor array for coarse and fine tuning, and a switched differential inductor, which controls the dual-band operation. The CMOS-based LC VCO is also implemented with low phase–noise performance using two series inductors in common source nodes. The proposed CMOS-based LC VCO provides dual bands of 0.9 ㎓ and 1.8 ㎓, and phase noise of -135 ㏈c/㎐ and -126 ㏈c/㎐, respectively, at a 1 ㎒ offset. The chip size is 1.3 ㎜ × 1.4 ㎜, including pads. The DC power consumption is 16.2 ㎽ at a 1.8 V supply voltage.