Abstract
A low-pass single-pole-single-throw (SPST) switch is analyzed and designed in a 1.2V 65nm bulk CMOS RF process for applications from DC to millimeter-wave frequencies. The SPST switch has a small active chip area of only 96μm×140μm and shows the measured wideband performance of insertion loss lower than 3dB and isolation higher than 22dB from DC to 70GHz. In particular, it achieves 1.6dB insertion loss, 27.9dB isolation, and 14.5dB return loss at 60GHz. The SPST switch also shows the measured power-handling capability of 11.5dBm at 40GHz and simulated switching speed of 1ns at 60GHz. These results clearly demonstrate that the SPST switch has potential to be used in highly-integrated CMOS radios.
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