Abstract
This work reports a SOI LIGBT with hole-bypassing gate configuration and oxide trench in drift region that reduces the device pitch to approximately the half of the conventional LIGBTs. The device shows a specific on-resistance of 330 mOmegamiddotmm2 that reaches the silicon-limit at 200V breakdown voltage, at an effective gate drive of 4.0V and a current density of 1000A/cm2 . The proposed device can drastically improve the cost-performance of PDP scan driver ICs by replacing the conventional LIGBTs
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