Abstract
We demonstrate an integrated waveguide technology and apply it to displacement sensing. The waveguide consists of a 175 nm thick Si3N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> core layer with a 3,000 nm SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> bottom cladding and exhibits a large evanescent field. Although the nanophotonic waveguides feature sub-X/4 vertical confinement, they are fabrication tolerant with micron-scale lateral features. The technology enables complex photonic circuits without electron-beam lithography, which is commonly required for silicon nanophotonics. An unbalanced Mach-Zehnder interferometer is demonstrated in which the presence of an optical fiber near the waveguide surface induces a phase shift, which correlates with the fiber's position. We discuss future work and prospects for high-resolution displacement sensing.
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