A low insertion loss RF switch using a 130 nm SOI process

Abstract

To realize a better radio frequency (RF) communication system, the RF switch, as an important module, is used to cooperate with other devices to form an RF front end for optimizing communication performances. This paper designs a single-pole multi-throw (SPMT) RF switch, which exhibits a low insertion loss of 0.57 dB at 1.9 GHz under the voltage of 2.2 to 4.7 V. The RF switch is fabricated using a 130 nm silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) process. It can be used in multi-frequency and multi-mode applications such as 4G/5G. The proposed RF switch has competitive performance and can be combined with other modules to achieve better wireless communication and promote the development of ultra-wideband and multi-mode wireless communication systems.