Abstract
ABSTRACTA multiprocess CVD system with the following main features is designed and constructed: the wafer holder is made of a Si wafer with diameter larger than the process wafers. This larger holder produces a better temperature uniformity on the process wafer. A good thermal contact between holder and process wafer is obtained by an electrostatic clamp. The holder supports the process wafer facing down. A remote plasma is produced in a small chamber inside the process chamber. The 100 KHz RF frequency keeps the system very simple and cheap while still reasonable ionization is achieved. SiO2 films were deposited using SiH4 and O2 with and without remote plasma of O2. At low temperatures and 1.5 Torr, process activation energies of about 0.9 and 0.3 eV were obtained respectively.
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