Abstract
We examine zinc-blende boron nitride’s low-field electron transport response. In particular, within the framework of a relaxation-time approximation analysis, we probe how the individual scattering processes contribute to the total electron drift mobility. The scattering processes considered include the ionized impurity, polar optical phonon, acoustic deformation potential, piezoelectric, and inter-valley scattering processes. A comparison with the results of experiment is presented.
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