A low driving voltage CCD with single layer electrode structure for area image sensor

Abstract

A new single layer electrode two-phase CCD was studied for the purpose of realizing low driving voltage operation in inter-line transfer CCD (IT-CCD) image sensor aiming for low power consumption. Conventional H-CCD with overlapping double layer electrode structure have not achieved signal charge transfer at very low driving voltage below 2 V due to appearance of potential pocket under the inter-electrode gap yet. The new CCD employs a new channel doping profile for potential pocket suppression at the inter-electrode gap. The new CCD also employs a stepped-oxide structure having a single layer transfer electrode covering both a thin gate oxide forming storage region and a thinner gate oxide forming barrier region. The inter-electrode gap of single layer electrode was decreased to as small as 0.3 /spl mu/m. As a result of these measures, a fabricated 1/3 in format 270 K pixel IT-CCD image sensor reproduces a fine video image even when it is operated at a driving voltage as low as 1.8 V.