Abstract
In this paper thin films of Sn doped ZnO was prepared via low-cost chemical sol-gel spin coating process. The Ohmic electrode Aluminum (Al) and Schottky electrode Palladium (Pd) on doped ZnO thin film were deposited through a hard mask by thermal evaporation techniques to obtain a planner Metal-Semiconductor-Metal (MSM) structure; hence present device was horizontal. The electrical characterization is used to analyze the UV detection capability of the fabricated device, and various calculated parameters include saturation current = 8.31 × 10−7 A/cm−2, ideality factor = 4.02, barrier height = 0.75 eV, etc. It was observed that forward and reversed bias current increases when exposed to Ultraviolet (UV) light. In addition, responsivity and series resistance are also reported in this paper.
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