Abstract
In this paper we analyze the influence of active layer thickness on the light absorption processes of c-Si solar cells by the finite-difference frequency-domain (FDFD) method and show that the ideal c-Si active layer thickness range is from 10 to 20 μm. By evaluating the absorption enhancement factor, we find that c-Si solar cells with thicknesses within this range can give full play to the synergistic effects of back reflectors and antireflection coatings. By using a simple light trapping scheme, which is composed of a Ag back reflector, a bilayer antireflection coating and a one-dimensional photonic crystal front surface texture structure with rectangular profile, a c-Si solar cell with an active layer thickness of 12 μm can obtain a higher photocurrent density of 32.6 mA cm−2 for normally incident sunlight and a broader acceptance angle range of −60°–60° for obliquely incident sunlight.
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