A low cost and high reliability true random number generator based on resistive random access memory

Abstract

A high reliability system for the generation of truly random numbers, based on Resistive Random Access Memory (RRAM) has been proposed. The circuit is using the random telegraph noise (RTN) in RRAM cell as a source of noise to force more jitter into the oscillators. Because these RTN signals from the RRAM cells are much larger than that in the MOSFET and thermal noise in a resistor, then the preamplifier is not required. A prototype chip has been fabricated in smic 0.18um standard CMOS logic process. The test results show that the features of the proposed true random number generator (TRNG) fulfill the NIST tests for randomness.