Abstract
We report a photodiode on InP substrate with a cutoff wavelength of 2.39 μm and peak room-temperature external quantum efficiency of 43% at 2.23 μm. Type-II GaInAs-GaAsSb quantum wells lattice-matched to InP were placed in the absorption region for long wavelength absorption. The device showed a peak detectivity of 5.6×10/sup 10/ cm/spl radic/HzW/sup -1/ at 200 K.
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