Abstract
An experimental setup designed for in situ electrical resistance measurement during thin film growth is described. The custom-built sample holder with a four-point probe arrangement can be loaded into a high-vacuum magnetron sputter-deposition chamber through a load-lock transfer system, allowing measurements on series of samples without venting the main chamber. Electrical contact is ensured with circular copper tracks inserted in a Teflon plate on a mounting holder station inside the deposition chamber. This configuration creates the possibility to measure thickness-dependent electrical resistance changes with sub-monolayer resolution and is compatible with use of sample rotation during growth. Examples are presented for metallic films with high adatom mobility growing in a Volmer-Weber mode (Ag and Pd) as well as for refractory metal (Mo) with low adatom mobility. Evidence for an amorphous-to-crystalline phase transition at a film thickness of 2.6 nm is reported during growth of Mo on an amorphous Si underlayer, supporting previous findings based on in situ wafer curvature measurements.
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