A literal gate using resonant-tunneling devices

Abstract

We propose a novel literal gate consisting of one resonant-tunneling diode (RTD) and two resonant-tunneling transistors (RTTs). Logic operation is based on the control of the switching sequence of these devices through the modulation of their peak currents by the input signal. By using an integrated RTD-HEMT pair as an RTT, we implement literal gates and successfully obtain the literal function. A modified literal gate that allows us to vary literal-window width even after completing device fabrication is also demonstrated.