Abstract
A light-emitting memristor (LEM) is reported based on a metal/mixed conductor/metal structure, where the mixed conductor is the ionic transition metal complex ruthenium(II) tris(bipyridine) with hexafluorophosphate counter ions. The device shows memory effects upon the application of an ac bias, in both current and electroluminescence intensity. The observation of memory in light emission offers the potential for optical read-out of the state of memristive devices.
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