Abstract
Near-infrared (NIR) electroluminescence (EL) devices based on Er3+ ions doped TiO2 emitting layer have been fabricated by employing a facile sol–gel method. The effect of Er3+ ion doping concentration on the EL performance of TiO2:Er3+ thin film devices was investigated. Moreover, a novel device with the core of TiO2:1%Er3+/ZnO heterostructure was designed and fabricated. The EL performance of the device with optimized Er3+ ion doping concentration and improved structure was significantly improved. The NIR EL-enabling voltage of the improved device is as low as ∼5 V. The attenuated concentration quenching effect and the ZnO film as an electron blocking layer should contribute to the improved EL performance of the optimized device.
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