Abstract
A meticulously detailed chemical procedure was employed to synthesize the Ru (II)-containing pyridine-2,6-diimine (pydim) organometallic complex. The resulting complex was then applied to Al-coated Si wafers using the spin-coating technique, leading to the production of Al/Ru(II) organometallic complex/n-Si/Al photodiodes. The light responsiveness of these photodiodes was demonstrated through the acquisition of I-V and I-t characteristics. Subsequently, essential parameters such as ideality factor, photosensitivity, barrier height, and photoresponse values were evaluated based on the obtained I-V and I-t plots. The calculations yielded ideality factors and barrier heights, resulting in average values of 6.41 and 0.552 eV, respectively. Furthermore, an in-depth analysis of the electrical properties of the diodes was conducted using G-V and C-V assessments, revealing a strong dependence on AC signal frequency. This investigation underscored that the observed frequency-related electrical behaviour is rooted in series resistance and interface states.
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