Abstract
For quantum-dot cellular automata molecular electronic devices, one of the fundamental tasks is to arrange the molecules on a surface in a controlled manner. In this report, we discuss a molecular lift off technique to form nanopatterns toward the development of molecular circuits. In our molecular lift off technique, we use electron beam lithography to form nano-trenches on a polymethylmethacrylate (PMMA) film on a SiO2 wafer. This wafer is soaked in a Creutz-Taube ion [(NH3)5Ru(pyrazine)Ru(NH3)5](o-toluenesulfonate)5 (CT5) aqueous solution. After residual PMMA removal, atomic force microscopy is used to investigate the resulting surface. Thirty-five nanometer CT5 lines are demonstrated on a SiO2 surface. Compared with other molecular nanopatterning techniques, ours is both economical and capable of high-resolution.
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