Abstract
Magnetic tunnel junctions (MTJs) with ultrathin single-crystal electrodes were prepared, and the influence of the quantum-well (QW) states formed in the electrodes on the tunnel magnetoresistance (TMR) effect was studied. MTJs with an ultrathin Fe(001) electrode showed oscillations in the conductivity and the TMR ratio in tunnel spectra. MTJs with an ultrathin non-magnetic Cu(001) layer inserted between an Al–O tunnel barrier and a ferromagnetic Co(001) electrode showed an oscillation in the TMR as a function of the Cu-layer thickness. The period of the TMR oscillation coincides with the oscillation period of interlayer exchange coupling in a Co(001)/Cu(001)/Co(001) film, indicating that the TMR oscillation originates from the spin-polarized QW states in Cu(001). The amplitude of the oscillation was so large that even the sign of the TMR ratio alternated.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
