Abstract
To obtain information about leaching reaction and kinetics of indium from indium-bearing materials under microwave heating (MH), leaching of indium from indium-bearing zinc ferrite (IBZF) has been investigated. IBZF samples under MH and under conventional heating (CH) were studied by X-ray diffraction and specific surface area. Compared with that of CH, the effect of MH and the effects of various control parameters on indium leaching were studied. The results showed that compared with CH, MH enhanced the indium leaching from IBZF and increased the leaching rate. The leaching behavior of indium from IBZF was analyzed by unreacted shrinking core model, and the regression of kinetic equations showed that leaching of indium from IBZF obeyed the model very well. The activation energies under MH and under CH were 77.374 kJ/mol and 53.555 kJ/mol, respectively; the ratio of frequency factor K0(MH)/K0(CH) was 10,818.36. The activation mechanism involved in leaching of indium under MH was mainly the increase of reactant energy and effective collision, which caused by the thermal and nonthermal microwave effect. Compared with the activation energy, the effective collision played a more important role in the acceleration of leaching of indium.
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