Abstract
ABSTRACTA kinetic Monte Carlo model is developed to examine the influence of As/Ga flux ratio on the Ga desorption kinetics during molecular beam epitaxy of (100)-GaAs, based on data reported in desorption mass spectrometry experiments. A good match to experimental results is obtained when a mechanism involving desorption from a physisorbed state is included, in addition to desorption from a chemisorbed state. Analysis of the results revealed that the dependence of the Ga desorption energy on the As/Ga flux ratio, observed in growth experiments, is explained in terms of the component due to desorption from the physisorbed state. The Ga desorption energy associated with the chemisorbed state is independent of the As/Ga flux ratio. These predictions are similar to results reported in a recent study of In desorption during molecular beam epitaxy of InGaAs
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