Abstract

AbstractInorganic CsPbI2Br perovskite is promising for solar cell applications due to its excellent thermal stability and optoelectronic characteristics. Unfortunately, the current high‐efficiency CsPbI2Br perovskite solar cells (PSCs) are mostly fabricated in an inert atmosphere due to their instability to moisture. Herein, a low‐dimensional intermediate‐assisted growth (LDIAG) method is reported for the deposition of CsPbI2Br film in ambient atmosphere by introducing imidazole halide (IMX: IMI and IMBr) into the precursor solution to control both nucleation and growth kinetics. The IMX first combines with PbI2 in the precursor film to form a 2D intermediate which then gradually releases PbI2 to slowly form high‐quality CsPbI2Br film during annealing. It is found that the LDIAG method produces a uniform, highly crystalline, pinhole‐free, and stable CsPbI2Br film with low defect density. Consequently, the solar cell efficiency is increased to as high as 17.26%, one of the highest for this type of device. Furthermore, the bare device without any encapsulation shows excellent long‐term stability with ≈86% of its initial efficiency retained after being exposed to the ambient environment for 1000 h. This work provides a perspective to tune the intermediate phases and crystallization pathway for high‐performance inorganic PSCs formed under ambient conditions.

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