Abstract
A Ka-band 6-W high power microwave monolithic integrated circuit amplifier for use in a very small aperture terminal system requiring high linearity is designed and fabricated using commercial 0.15-μm GaAs pHEMT technology. This three-stage amplifier, with a chip size of 22.1 mm2 can achieve a saturated output power of 6 W with a 21% power-added efficiency and 15-dB small signal gain over a frequency range of 28.5 GHz to 30.5 GHz. To obtain high linearity, the amplifier employs a class-A bias and demonstrates an output third-order intercept point of greater than 43.5 dBm over the above-mentioned frequency range.
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