Abstract

A concurrent dual-band single-ended input to differential output (single-ended-to-differential) low-noise amplifier (LNA) employing a novel transformer feedback single-ended-to-differential dual-band load is proposed. The developed LNA topology is flexible in controlling the stopband notch frequency by optimizing the transformer’s self-inductance and coupling coefficient. It also has a unique advantage in controlling both the stopband rejection and passband gain balance, simultaneously. The LNA is designed using a 0.18- $\mu \text{m}$ BiCMOS process and exhibits the same single-ended-to-differential peak gains of 19.2 dB at 21.5 and 36 GHz in the low- and high-passband, respectively, with the stopband rejection ratio of 37.1 dB. In the single-ended input to single-ended output (single-ended) mode operation, the designed LNA exhibits the measured peak gains of 15.7/16.6 dB at 21.5 GHz and 15.7/16.7 dB at 36 GHz for the two signal paths. It achieves the best measured single-ended noise figures of 4.3/4.0 and 4.3/4.2 dB for the two signal paths in the respective low and high passbands. The LNA also attains the measured differential gain and phase imbalances of 0.9/1.0 dB and 0.5/10.4 degree in the low/high passband, respectively. This LNA is the first concurrent dual-band single-ended-to-differential LNA integrated on-chip operating in ${K}$ - and Ka -band.

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