A Junction Temperature-based PSpice Short-circuit Model of SiC MOSFET Considering Leakage Current

Abstract

In order to estimate the short-circuit capability of SiC MOSFET-based power converter, this paper proposes a behavioral model of SiC MOSFET that can be used for short-circuit simulation in PSpice, and the leakage current generated during short circuit is considered, which is an early warning of device failure. The short-circuit characteristic of SiC MOSFET is discussed and analyzed, and a thermal model of case-to-junction is built to describe the junction temperature of SiC MOSFET during short-circuit condition. Based on the junction temperature information, the channel current model and leakage current model are established respectively. The simulation results show that the short-circuit model can correctly reflect the static characteristic and short-circuit characteristic of SiC MOSFET. This circuit model can provide guidance for the design of short circuit protection circuit.