Abstract
On the basis of Pt/InAlAs metal–semiconductor (MS) structure, an interesting hydrogen sensor is fabricated. The Pt/InAlAs Schottky diode-type hydrogen sensor studied exhibits significant sensing performance including high relative sensitivity ratio (Sr) of about 2600%, widespread reverse voltage regime (0∼ - 5 V), and stable hydrogen sensing current density–voltage (J–V) curves. The calculated Schottky barrier height change and series resistance variation from the thermionic emission model and Norde method are 87.0 meV and 288 Ω, respectively. The negative temperature dependence on Sr is due to the lower hydrogen coverage at higher temperature. Yet, the positive temperature dependence on Δ I is caused by thermal effect. Based on the excellent integration compatibility with InP-based electronic devices, the device studied does provide potential for high-performance sensor array applications.
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